Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V DS
_
I SD
L
Driver
D = --------------------------
V GS
( Driver )
I SD
( DUT )
V GS
R G
Same Type
as DUT
? dv/dt controlled by R G
? I SD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
I FM , Body Diode Forward Current
di/dt
V DD
10V
I RM
Body Diode Reverse Current
V DS
( DUT )
Body Diode Recovery dv/dt
V SD
Body Diode
Forward Voltage Drop
V DD
?2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C1
6
www.fairchildsemi.com
相关PDF资料
FCH47N60_F133 MOSFET N-CH 600V 47A TO-247
FCH47N60F_F133 MOSFET N-CH 600V 47A TO-247
FCH47N60NF MOSFET N-CH 600V 45.8A TO-247
FCH47N60N MOSFET N-CH 600V 47A TO-247
FCH76N60NF MOSFET N-CH 600V 72.8A TO247-3
FCH76N60N MOSFET N-CH 600V 76A TO-247
FCI25N60N MOSFET N-CH 600V 25A I2PAK
FCI7N60 MOSFET N-CH 600V 7A I2PAK
相关代理商/技术参数
FCH47N60 功能描述:MOSFET 650V SUPER FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:new generation of high voltage MOSFET
FCH47N60_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FCH47N60_13 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SuperFET MOSFET
FCH47N60_F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 47A TO-247
FCH47N60_F133 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60F 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60F_0605 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET